Calculators for photodetector performance metrics.
54 calculators
Flicker noise: S_I(f) = K_f · I^α / f. Noise spectral density falls as 1/f.
Afterpulse probability, trap dynamics, and dead time trade-offs in avalanche photodiodes.
Input-referred noise sets the detection floor. σ_amp = e_n.
Anti-blooming shunts excess charge to drain when well exceeds threshold. Trade-off: charge dump efficiency vs full well capacity and linearity.
APD multiplication gain, excess noise factor (McIntyre), and material comparison.
Back-illuminated sensors bypass gate structures for higher QE and better blue/UV response: QE ratio and SNR gain in the shot- and read-noise limits.
Photodiode on a load resistor: noise grows as √Δf until the R_L·C_j roll-off, then levels off at √(kT/C).
Gated signal averaging of a repetitive pulse: gate-averaged signal, gate noise e_n·√NEB, SNR after N averages and the optimum gate width.
Compare CCD, sCMOS, phone CMOS and EMCCD pixels: SNR from photons × QE, saturation and dynamic range.
Single-channel CPM: anode sensitivity, photon-counting and analog SNR, and pulse resolution with the channel's excess noise.
Dark current reduction and SNR improvement from thermoelectric (TEC) or cryogenic cooling.
Cosmic-ray muon hits on a silicon image sensor: hits per frame, path through the sensitive layer, mean and most probable charge per track, and pixels hit.
Silicon detector dark current — exponential doubling model. I_dark(T) = I₀ · 2^((T−T₀)/T_d).
Temperature dependence of photodiode dark current and its shot noise.
Specific detectivity from NEP, area, and bandwidth. D* = √(A·Δf) / NEP
Detector responsivity from quantum efficiency and wavelength with wavelength sweep.
Full well capacity, dynamic range with ADC quantization noise, SNR at saturation, and a nonlinearity roll-off.
EMCCD gain: Robbins–Hadwen excess noise of an N-stage register, effective read noise and SNR with and without EM gain.
Compare electron-multiplying CCD with sCMOS for low-light imaging.
APD excess noise vs gain — McIntyre model for different semiconductor materials.
APD gain drift at fixed bias from the breakdown-voltage temperature coefficient, and PMT gain drift.
GBW = A₀ · f₋₃dB. The product of DC gain and bandwidth is constant for a single-pole system.
SPAD: breakdown voltage, overbias, temperature effects, PDE, and dark count rate.
InₓGa₁₋ₓAs band gap, cutoff wavelength, QE, responsivity, generation dark current, NEP and D* for SWIR p-i-n photodiodes.
Photocathode → MCP → phosphor → CCD gain chain with gating and noise analysis.
Thermal noise voltage, current, and power across a resistor.
Photodiode junction capacitance vs reverse bias, doping profile, and RC bandwidth impact.
kTC reset noise voltage, noise charge, and conversion gain for image sensors.
SNR of a linear-mode APD receiver versus gain: McIntyre excess noise, shot and thermal noise, and the optimum gain for a given load resistance.
Lock-in amplifier: demodulation gain, ENBW, noise rejection, and SNR improvement.
MCP gain, spatial resolution, and effective QE for photon detectors.
Image sensor MTF: pixel aperture, charge spread, and optical blur contributions.
Calculate NEP and specific detectivity D* from detector noise sources: shot noise, thermal (Johnson) noise, and dark current.
RC, transit-time and diffusion-tail bandwidth, junction capacitance and thermal NEP vs photodiode area.
Photodiode + transimpedance amplifier: Butterworth bandwidth, input-referred noise including the e_n·C term, and NEP.
PMT gain, signal current, excess noise factor, and SNR from dynode parameters.
Poisson statistics, SNR, dead time corrections, and count distributions.
Photon transfer curve: read, shot and PRNU noise regimes vs signal, their crossovers, conversion gain and dynamic range.
PRNU, DSNU, and spatial uniformity analysis for image sensors.
Charge diffusion and electrical crosstalk in a silicon image sensor: absorption depth, charge reaching the neighbouring pixels vs wavelength, and MTF at Nyquist.
Silicon and InGaAs detector quantum efficiency vs wavelength from absorption data: collecting thickness, diffusion length, dead layer, surface reflection, fill factor and microlens gain.
Readout noise, dark current, shot noise, and SNR analysis for image sensors.
Shot noise current, SNR, and noise vs signal analysis for photodetectors.
Compare silicon and InGaAs p-i-n photodiodes: QE spectra from absorption data, responsivity, generation dark current and SNR vs wavelength.
Si photodiode parameters: bandgap, QE, responsivity, dark current, and spectral response.
SPCM dead time correction, SNR, dark count effects, and afterpulsing analysis.
SINAD (SNDR), SNR, THD, signal-to-distortion ratio and ENOB, with the ideal quantisation SNR of an N-bit ADC.
Non-paralyzable and paralyzable dead time models for SPAD detectors.
Single-photon avalanche diode — PDE, DCR, dead time, afterpulsing, and SNR analysis.
Silicon photodiode responsivity and quantum efficiency vs wavelength, plus a check of a datasheet responsivity against the η = 1 limit.
Temporal resolution and time window of a streak camera from sweep speed, slit image, pixel size, tube limit and trigger jitter.
1/f noise, white noise, and read noise as functions of frequency and integration time.
Photoemission, responsivity, dark current, and frequency response for vacuum photodiodes.
Well capacity, dynamic range, pixel capacitance, and usable bit depth for image sensors.