Junction Capacitance

Photodiode junction capacitance vs reverse bias, doping profile, and RC bandwidth impact.

Model: Textbook approximation

Junction Capacitance

3.273 pF

RC Bandwidth

810.38 MHz

RC Time Constant

196 ps

C_j = C_j0 / (1 + V_R/V_bi)^m

f_3dB = 1 / (2π·(R_L + R_s)·C_j)

Depletion approximation; ignores package and stray capacitance, and the transit-time limit.

Model and references

Textbook approximation. A standard approximation from the literature (for example paraxial, plane-wave or Gaussian-beam), valid within the range the page states. About the tiers

Depletion approximation C_j0/(1 + V_R/V_bi)^m with a single RC pole through load plus series resistance. Package and stray capacitance, the transit-time limit and forward bias are left out, and so is full depletion (PIN punch-through), where C_j stops falling.

  1. Sze S. M., Ng K. K. (2007). Physics of Semiconductor Devices, 3rd ed. Wiley. p–n junction depletion capacitance (abrupt m = 1/2, linearly graded m = 1/3), n_i(T), generation and diffusion currents. doi:10.1002/0470068329
Report a problem

A wrong value, a formula, a reference, or a page that misbehaves. The report includes this page and its current inputs.